FFD04H60S【PDF 1/5 页】DIODE HYPERFASTII 600V 4A DPAK

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November 2013

FFD04H60S

—

Hyperfast II Diode

?2008 Fairchild Semiconductor Corporation

FFD04H60S Rev. C1

www.fairchildsemi.com

FFD04H60S

Hyperfast II Diode

Features

? Hyperfast Recovery, trr = 60 ns (@ IF

= 4 A)

? Max Forward Voltage, VF

= 2.1 V (@ T

= 25°C)

? 600 V Reverse Voltage and High Reliability

? Avalanche Energy Rrated

? RoHS Compliant

Applications

? General Purpose

? SMPS, Power Switching Circuits

? Free-Wheeling Diode for Motor Application

Description

The FFD04H60S is a hyperfast II diode and silicon nitride passiv-

ated ion-implanted epitaxial planar

construction.

This device is

intended for use as freewheeling/clamping diodes in a variety of

switching power supplies and other power switching applica-

tions. Its low stored charge and hyperfast soft recovery minimize

ringing and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

Absolute Maximum Ratings

TC = 25oC unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Unit

VRRM

Peak Repetitive Reverse Voltage 600 V

VRWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

IF(AV)

Average Rectified Forward Current @ TC

= 130

oC 4 A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

40 A

TJ, TSTG

Operating and Storage Temperature Range -65 to +150

Symbol Parameter Max. Unit

R?JC

Maximum Thermal Resistance, Junction to Case 4.0

oC/W

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFD04H60S F04H60S TO-252(D-PAK) Reel 13” Dia N/A

2500

TO-252

(D-PAK)DPAK

(TO252)

1,3 Cathode 2. Anode

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